Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

• Published in: Applied physics. A, Materials science & processing Vol. 126; no. 5
• Main Authors: Li, Tingting, Wang, Xiaolei, He, Xiaobin, Tang, Bo, Han, Kai, Qi, Zeming, Jiang, Haojie, Xiong, Wenjuan, Zhang, Peng, Li, Junfeng, Yan, Jiang, Xiang, Jinjuan, Lin, Fujiang
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.05.2020; Springer Nature B.V
• Subjects: Annealing; Applied physics; Capacitors; Characterization and Evaluation of Materials; Charge deposition; Charge distribution; Condensed Matter Physics; Dipoles; Hafnium oxide; Interfaces; Machines; Manufacturing; Materials science; Metal oxide semiconductors; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Silicon dioxide; Surfaces and Interfaces; Thin Films; High; Dipole; Flatband voltage; Post-deposition annealing; dielectric; Metal gate
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-020-03565-8

We experimentally investigate the effect of post-deposition annealing on the charge distribution of a metal-oxide-semiconductor capacitor with a TiN/HfO 2 /SiO 2 /Si gate structure. We decoupled interfacial charges at the SiO 2 /Si and HfO 2 /SiO 2 interfaces; bulk charges in HfO 2 ; and the dipole formation at the HfO 2 /SiO 2 interface. The interfacial charges at the HfO 2 /SiO 2 interface decreased and the dipole increased after H 2 or N 2 annealing. Oxygen dangling bonds are the physical origin of the charges at the HfO 2 /SiO 2 interface. The interfacial charges at the SiO 2 /Si interface and the bulk charges in HfO 2 are almost unchanged.