Effect of hydrogenated silicon film microstructure on the surface states of n-type silicon nanowires and solar cells

Here various microstructure hydrogenated silicon has been used to passivate n-type silicon nanowires (SiNWs) and its core/shell solar cells. There are two differences in photoluminescence (PL) spectroscopy between SiNWs and passivated SiNWs: (a) the increased PL intensity and (b) a blue-shift of the...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 32; no. 3; pp. 3066 - 3071
Main Authors Yang, Ping, Zeng, Xiangbo
Format Journal Article
LanguageEnglish
Published New York Springer US 01.02.2021
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Hydrogenation
Infrared analysis
Materials Science
Microstructure
Nanowires
Optical and Electronic Materials
Passivity
Photoluminescence
Photovoltaic cells
Silicon
Silicon films
Solar cells
Surface defects
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Summary:Here various microstructure hydrogenated silicon has been used to passivate n-type silicon nanowires (SiNWs) and its core/shell solar cells. There are two differences in photoluminescence (PL) spectroscopy between SiNWs and passivated SiNWs: (a) the increased PL intensity and (b) a blue-shift of the PL peak. Through analyzing the PL results, we found the infrared band at 800 nm is associated with dangling bonds on SiNWs. The performance of the core/shell SiNWs solar cells are improved attributed to reduced surface defects by the intrinsic Si:H layer passivation. Furthermore, the passivation effect with a-Si:H layer is better than its counterpart with µc-Si:H layer, which is due to the different microstructures especially the hydrogen-terminated.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-05056-1