Wideband, Low Driving Voltage Traveling-Wave Mach-Zehnder Modulator for RF Photonics

We report the design, fabrication, and testing of a traveling-wave Mach-Zehnder modulator on a GaAs substrate. Operating at 870-nm wavelength, we obtained an extremely low driving voltage of 0.45 V and a high measurement-instrument-limited small-signal modulation bandwidth of 18 GHz, projected to an...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 20; no. 7; pp. 517 - 519
Main Authors Jarrahi, M., Lee, T.H., Miller, D.A.B.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2008
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandwidth
Fabrication
Gallium arsenide
Low voltage
Optical device fabrication
Optical modulation
phase modulation
photodetectors
Photonics
quantum-confined Stark effect (QCSE)
Radio frequency
Testing
Wavelength measurement
Wideband
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Summary:We report the design, fabrication, and testing of a traveling-wave Mach-Zehnder modulator on a GaAs substrate. Operating at 870-nm wavelength, we obtained an extremely low driving voltage of 0.45 V and a high measurement-instrument-limited small-signal modulation bandwidth of 18 GHz, projected to an estimated bandwidth of 50 GHz. We have also monolithically integrated photodetectors with an impulse response of 8-ps full-width at half-maximum, and a saturation power of 330 mW, giving a flexible high-performance platform for RF photonics.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.918889