Numerical Investigation on Effect of Side Heater Modification on the Stress Distribution and Dislocation Density of Multi-Crystalline Silicon Ingot Grown by DS Process

• Published in: SILICON Vol. 15; no. 18; pp. 7755 - 7764
• Main Authors: Muthukumar, R., Aravinth, K., Bhargav, P. Balaji, Ramasamy, P.
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01.12.2023; Springer Nature B.V
• Subjects: Chemistry; Chemistry and Materials Science; Crystal dislocations; Directional solidification; Dislocation density; Environmental Chemistry; Heaters; Ingots; Inorganic Chemistry; Investigations; Lasers; Materials Science; Mathematical models; Numerical analysis; Optical Devices; Optics; Photonics; Polymer Sciences; Reduction; Shear stress; Silicon; Simulation; Strain hardening; Stress distribution; Temperature distribution; Temperature profiles; Thermal stress; Dislocation density; Thermal stress; Heater modification; Directional solidification; Transient global simulation
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-023-02614-0

A transient global numerical simulation is adopted to develop a high quality multi-crystalline silicon (mc-Si) ingot using directional solidification (DS) furnace. The geometry of the simulation furnace is based on the G1 DS furnace. In this simulation, the modification is done on the side heaters wherein each heater group has different temperature profile. The thermal field is investigated during and after solidification process. The thermoelastic stress model is solved for the stress distribution in the mc-Si ingot. The modified heater system results in the reduction of thermal stress up to 8.3 × 10 3 Mpa and the reduction of dislocation up to 4.0 × 10 5 [1/m 2 ]. Also, the melt crystal interface, temperature distribution and power profile are investigated. From the heater modification system will be reduce the thermal stress and dislocation density in the grown ingot.