Microwave absorption properties of Ti3SiC2/Na3Zr2Si2PO12 composites fabricated by plasma spraying and vacuum sintering in the X-band

• Published in: Journal of materials science. Materials in electronics Vol. 32; no. 14; pp. 19958 - 19965
• Main Authors: Chen, Dan, Zhou, Yingying, Xie, Hui, Luo, Fa, Tang, Jianjiang, Zhang, Haihong
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.07.2021; Springer Nature B.V
• Subjects: Ceramic coatings; Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Complex permittivity; Composite materials; Conduction losses; Dielectric properties; High temperature; Materials Science; Microwave absorption; Optical and Electronic Materials; Permittivity; Plasma spraying; Superhigh frequencies; Titanium silicon carbide; Vacuum sintering; Weight reduction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-021-06520-2

Developing high-temperature microwave absorption material with light weight is crucial. In this work, Ti 3 SiC 2 /Na 3 Zr 2 Si 2 PO 12 composites were exploited as light microwave absorption material at high temperature by plasma spraying and vacuum sintering for microstructure, phase, dielectric property, and microwave absorption property study. Results showed that both the preparation method and Ti 3 SiC 2 concentration had vital influences on the dielectric properties and microwave absorption properties of Ti 3 SiC 2 /Na 3 Zr 2 Si 2 PO 12 composites. The denser Ti 3 SiC 2 /Na 3 Zr 2 Si 2 PO 12 ceramics had higher complex permittivity than that of Ti 3 SiC 2 /Na 3 Zr 2 Si 2 PO 12 coatings with lower density, which could obtain better microwave absorption property in thinner thickness with less Ti 3 SiC 2 content. As the content of Ti 3 SiC 2 increased, the complex permittivity of both Ti 3 SiC 2 /Na 3 Zr 2 Si 2 PO 12 coatings and ceramics improved due to the increased interfacial polarization and conduction loss. The optimum microwave absorption property was obtained in Ti 3 SiC 2 /Na 3 Zr 2 Si 2 PO 12 ceramic with 10% Ti 3 SiC 2 content, which had a bandwidth of 4.2 GHz and minimum reflection loss (RL m ) of − 14.4 dB in 1.7 mm.