Strain-induced enhancement of carrier mobility and optoelectronic properties in antimonene/germanane vdW heterostructure
By means of first-principles calculations, we report the in-plane strain effect on the structural stability, electronic structures, and optical properties of antimonene/germanane van der Waals heterostructure achieved by vertically stacking antimonene and germanene monolayers. The antimonene/germana...
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| Published in | Applied physics. A, Materials science & processing Vol. 128; no. 11 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
01.11.2022
Springer Nature B.V |
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| Abstract | By means of first-principles calculations, we report the in-plane strain effect on the structural stability, electronic structures, and optical properties of antimonene/germanane van der Waals heterostructure achieved by vertically stacking antimonene and germanene monolayers. The antimonene/germanane heterostructure with type-II band alignment has an indirect band gap of 1.38 eV. The band gap, band alignment, carrier mobility, and optical absorption coefficient of the heterostructure can be tuned by loading in-plane strain. In particular, the in-plane strain can drive multiple indirect–direct–indirect band gap transitions and the band-edge alignment from type-I to type-II. Moreover, the heterostructure exhibits increased hole mobility and ultra-high electron mobility up to 3 × 10
4
cm
2
V
−1
s
−1
under the tensile strain of 4%. These findings suggest large potential of antimonene/germanane heterostructure for electronic and optoelectronic applications. |
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| AbstractList | By means of first-principles calculations, we report the in-plane strain effect on the structural stability, electronic structures, and optical properties of antimonene/germanane van der Waals heterostructure achieved by vertically stacking antimonene and germanene monolayers. The antimonene/germanane heterostructure with type-II band alignment has an indirect band gap of 1.38 eV. The band gap, band alignment, carrier mobility, and optical absorption coefficient of the heterostructure can be tuned by loading in-plane strain. In particular, the in-plane strain can drive multiple indirect–direct–indirect band gap transitions and the band-edge alignment from type-I to type-II. Moreover, the heterostructure exhibits increased hole mobility and ultra-high electron mobility up to 3 × 104 cm2 V−1 s−1 under the tensile strain of 4%. These findings suggest large potential of antimonene/germanane heterostructure for electronic and optoelectronic applications. By means of first-principles calculations, we report the in-plane strain effect on the structural stability, electronic structures, and optical properties of antimonene/germanane van der Waals heterostructure achieved by vertically stacking antimonene and germanene monolayers. The antimonene/germanane heterostructure with type-II band alignment has an indirect band gap of 1.38 eV. The band gap, band alignment, carrier mobility, and optical absorption coefficient of the heterostructure can be tuned by loading in-plane strain. In particular, the in-plane strain can drive multiple indirect–direct–indirect band gap transitions and the band-edge alignment from type-I to type-II. Moreover, the heterostructure exhibits increased hole mobility and ultra-high electron mobility up to 3 × 10 4 cm 2 V −1 s −1 under the tensile strain of 4%. These findings suggest large potential of antimonene/germanane heterostructure for electronic and optoelectronic applications. |
| ArticleNumber | 958 |
| Author | Jiao, Zhiwei Jiang, Zhouting Yan, Jie Yang, Xue Cao, Dan Shu, Haibo Wang, Jianfeng |
| Author_xml | – sequence: 1 givenname: Jie surname: Yan fullname: Yan, Jie organization: College of Science, China Jiliang University – sequence: 2 givenname: Dan surname: Cao fullname: Cao, Dan email: caodan@cjlu.edu.cn organization: College of Science, China Jiliang University – sequence: 3 givenname: Xue surname: Yang fullname: Yang, Xue organization: College of Science, China Jiliang University – sequence: 4 givenname: Jianfeng surname: Wang fullname: Wang, Jianfeng organization: College of Science, China Jiliang University – sequence: 5 givenname: Zhouting surname: Jiang fullname: Jiang, Zhouting organization: College of Science, China Jiliang University – sequence: 6 givenname: Zhiwei surname: Jiao fullname: Jiao, Zhiwei organization: College of Science, China Jiliang University – sequence: 7 givenname: Haibo surname: Shu fullname: Shu, Haibo organization: College of Optical and Electronic Technology, China Jiliang University |
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| Copyright | The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
| Copyright_xml | – notice: The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. |
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| Snippet | By means of first-principles calculations, we report the in-plane strain effect on the structural stability, electronic structures, and optical properties of... |
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| SubjectTerms | Absorptivity Alignment Applied physics Carrier mobility Characterization and Evaluation of Materials Condensed Matter Physics Electron mobility Energy gap First principles Heterostructures Hole mobility Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optical properties Optoelectronics Physics Physics and Astronomy Plane strain Processes Structural stability Surfaces and Interfaces Tensile strain Thin Films Two dimensional materials |
| Title | Strain-induced enhancement of carrier mobility and optoelectronic properties in antimonene/germanane vdW heterostructure |
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