Strain-induced enhancement of carrier mobility and optoelectronic properties in antimonene/germanane vdW heterostructure

• Published in: Applied physics. A, Materials science & processing Vol. 128; no. 11
• Main Authors: Yan, Jie, Cao, Dan, Yang, Xue, Wang, Jianfeng, Jiang, Zhouting, Jiao, Zhiwei, Shu, Haibo
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.11.2022; Springer Nature B.V
• Subjects: Absorptivity; Alignment; Applied physics; Carrier mobility; Characterization and Evaluation of Materials; Condensed Matter Physics; Electron mobility; Energy gap; First principles; Heterostructures; Hole mobility; Machines; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Optical properties; Optoelectronics; Physics; Physics and Astronomy; Plane strain; Processes; Structural stability; Surfaces and Interfaces; Tensile strain; Thin Films; Two dimensional materials; Strain effect; First principle calculation; Optoelectronic properties; Carrier mobility; vdW Heterostructure
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-022-06093-9

By means of first-principles calculations, we report the in-plane strain effect on the structural stability, electronic structures, and optical properties of antimonene/germanane van der Waals heterostructure achieved by vertically stacking antimonene and germanene monolayers. The antimonene/germanane heterostructure with type-II band alignment has an indirect band gap of 1.38 eV. The band gap, band alignment, carrier mobility, and optical absorption coefficient of the heterostructure can be tuned by loading in-plane strain. In particular, the in-plane strain can drive multiple indirect–direct–indirect band gap transitions and the band-edge alignment from type-I to type-II. Moreover, the heterostructure exhibits increased hole mobility and ultra-high electron mobility up to 3 × 10 4  cm 2  V −1  s −1 under the tensile strain of 4%. These findings suggest large potential of antimonene/germanane heterostructure for electronic and optoelectronic applications.