An extreme high-performance ultraviolet photovoltaic detector based on a ZnO nanorods/phenanthrene heterojunction

Ultraviolet (UV) photodetectors are important optoelectronic devices. The development of a high-performance UV detector, however, has been impeded by lack of stable p-type wide gap semiconductors. Herein, an extremely high UV response for a ZnO nanorods/phenanthrene (Phen) photovoltaic detector has...

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Bibliographic Details
Published inRSC advances Vol. 6; no. 15; pp. 1276 - 128
Main Authors Cheng, Wentao, Tang, Libin, Xiang, Jinzhong, Ji, Rongbin, Zhao, Jun
Format Journal Article
LanguageEnglish
Published 01.01.2016
Subjects
Detectors
Nanorods
P-type semiconductors
Phenanthrene
phenanthrenes
Photovoltaic cells
Semiconductors
Solar cells
Ultraviolet
zinc oxide
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Summary:Ultraviolet (UV) photodetectors are important optoelectronic devices. The development of a high-performance UV detector, however, has been impeded by lack of stable p-type wide gap semiconductors. Herein, an extremely high UV response for a ZnO nanorods/phenanthrene (Phen) photovoltaic detector has been realized, utilizing phenanthrene as a p-type wide gap organic semiconductor; a detectivity ( D *) as high as ∼9.0 × 10 13 cm Hz 1/2 W −1 has been reached, showing significant potential for optoelectronic applications. ZnO nanorods/Phen heterojunction based UV photovoltaic detector is fabricated which shows an extremely high performance with a detectivity up to ∼9.0 × 10 13 Jones.
Bibliography:10.1039/c5ra25059e
Electronic supplementary information (ESI) available: The performance comparison of the ZnO nanorods/Phen UV detector with some common UV detectors. See DOI
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ISSN:2046-2069
2046-2069
DOI:10.1039/c5ra25059e