Effect of Sb doping on structural and photoelectric properties of SnO2 thin films

• Published in: Journal of materials science. Materials in electronics Vol. 31; no. 4; pp. 3289 - 3302
• Main Authors: Niu, Yanfen, Duan, Libing, Zhao, Xiaoru, Han, Cong, Guo, Jiale, Geng, Wangchang
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.02.2020; Springer Nature B.V
• Subjects: Annealing; Antimony; Carrier density; Carrier transport; Characterization and Evaluation of Materials; Chemistry and Materials Science; Conduction bands; Dip coatings; Electric properties; Electrochemical impedance spectroscopy; Energy levels; Glass substrates; Immersion coating; Materials Science; Optical and Electronic Materials; Photoelectric effect; Photoelectricity; Sol-gel processes; Spectrum analysis; Thin films; Tin dioxide; Transmittance; Vacuum annealing; Valence band
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-020-02877-y

Sb-doped SnO 2 (ATO) thin films were synthesized via the sol–gel dip-coating method on glass substrates. The XPS and XRD spectra showed that Sb atoms were successfully incorporated into the SnO 2 lattice and mostly existed in the form of Sb 5+ (~ 90%) in 1 at.% ATO thin films annealed in air and further annealed in vacuum. The transmittance spectra revealed that the average transmittance was more than 75% at the wavelength range of 325–700 nm. The average sheet resistancewas 14.05 kΩ/□ in 1 at.% ATO thin films annealing in air and much less than undoped SnO 2 . The electric property was better when ATO thin films were further annealing vacuum compared to annealing in air. The average sheet resistance and resistivity of 1 at.% ATO thin films were 2.42 kΩ/□ and 0.035 Ω cm, respectively. The PL showed that electrons transition from a shallow level of V O to the minimum level of conduction band (CBM) increased with increasing of Sb 3+ ions. The maximum level of valence band (VBM) and CBM level positions were mainly affected by Sb 3+ and Sb 5+ energy levels after air annealing, respectively. The behavior of surface carrier transport was investigated after further vacuum annealing. The CBM–VBM level position mainly was affected by V O energy level after further vacuum annealing. It was further proved by the Hall carrier concentration and the electrochemical impedance spectroscopy (EIS).