Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications

This contribution deals with the microwave linear characterization and noise figure measurement of four on-wafer GaAs pseudomorphic high-electron mobility transistors having scaled gate widths. The proposed measurement campaign has been fulfilled in two different laboratories: The University of Mess...

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Bibliographic Details
Published inElectronics (Basel) Vol. 8; no. 11; p. 1365
Main Authors Caddemi, Alina, Cardillo, Emanuele, Crupi, Giovanni, Boglione, Luciano, Roussos, Jason
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.11.2019
Subjects
Bias
Calibration
Electron mobility
Laboratories
Noise
Noise measurement
Transistors
United States > US
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Summary:This contribution deals with the microwave linear characterization and noise figure measurement of four on-wafer GaAs pseudomorphic high-electron mobility transistors having scaled gate widths. The proposed measurement campaign has been fulfilled in two different laboratories: The University of Messina, Italy and US Naval Research Laboratory, Washington, DC, USA. Two equivalent approaches have been straightforwardly employed: a standard tuner-based technique and a novel tuner-less technique. The effectiveness of the novel technique has been confirmed as carried out independently by the two laboratories, evidencing the benefits of both techniques. The proposed experimental activity highlights the applicability of the tunerless technique for the noise characterization of advanced on-wafer devices without the constraint imposed by the addition of a source tuner to the standard measurement setup.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics8111365