Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications

• Published in: JOM (1989) Vol. 74; no. 3; pp. 777 - 786
• Main Authors: Tursucu, A., Aydogan, S., Kocyigit, A., Ozmen, A., Yilmaz, M.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.03.2022; Springer Nature B.V
• Subjects: Advanced Functional and Structural Thin Films and Coatings; Chemistry/Food Science; Chromium; Crystal lattices; Crystal structure; Earth Sciences; Electrical properties; Energy gap; Energy value; Engineering; Environment; Glass substrates; Light; Luminous intensity; Optical properties; Optoelectronic devices; Parameter sensitivity; Photodiodes; Photosensitivity; Photovoltaic cells; Physics; Silicon substrates; Spray pyrolysis; Temperature; Thin films; Zinc oxide; Zinc oxides
• ISSN: 1047-4838; 1543-1851
• DOI: 10.1007/s11837-021-05096-w

Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p -Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV–visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p -Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV–visible spectra provided the transmittance plots and band gap energy values. I–V measurements were performed on the fabricated Au/ZnO/ p -Si and Au/ZnO:Cr/ p -Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I–V measurements by various techniques, and have been discussed in detail. A 100-mW/cm 2 power intensity light was exposed on the Au/ZnO:Cr/ p -Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/ p -Si device can be thought of for optoelectronic applications.