Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys

We employ the optically detected magnetic resonance (ODMR) technique to study and identify important grown-in defects in Ga(In)NP grown by molecular-beam epitaxy (MBE). Several types of defects were revealed from ODMR studies. The dominant defects were found to be related to Ga interstitials, eviden...

Full description

Saved in:
Bibliographic Details
Published inSuperlattices and microstructures Vol. 43; no. 5; pp. 620 - 625
Main Authors Dagnelund, D., Wang, X.J., Vorona, I.P., Buyanova, I.A., Chen, W.M., Utsumi, A., Furukawa, Y., Moon, S., Wakahara, A., Yonezu, H.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2008
Subjects
Defects
Dilute nitrides
GaInNP
Interstitials
MBE
ODMR
GaInNP
MBE
Dilute nitrides
ODMR
Interstitials
Defects
Online AccessGet full text

Cover

More Information
Summary:We employ the optically detected magnetic resonance (ODMR) technique to study and identify important grown-in defects in Ga(In)NP grown by molecular-beam epitaxy (MBE). Several types of defects were revealed from ODMR studies. The dominant defects were found to be related to Ga interstitials, evident form their characteristic hyperfine interaction arising from the spin interaction between the electron and the Ga nucleus. Some other as yet unidentified intrinsic defects were also found to be commonly present in the alloys. The effects of growth conditions (ion bombardment, N 2 gas flow, etc.) and post-growth rapid thermal annealing on the formation of these defects were studied in detail, shedding light on the formation mechanism of defects.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2007.07.008