Structural, electrical properties of bismuth and niobium-doped LaNiO3 perovskite obtained by sol–gel route for future electronic device applications

• Published in: Indian journal of physics Vol. 98; no. 8; pp. 2745 - 2753
• Main Authors: Nassar, Kais Iben, Benamara, M., Kechiche, L., Teixeira, S. Soreto, Graça, M. P. F.
• Format: Journal Article
• Language: English
• Published: New Delhi Springer India 01.07.2024; Springer Nature B.V
• Subjects: Astrophysics and Astroparticles; Bismuth; Dielectric relaxation; Diffraction patterns; Electrical properties; Equivalent circuits; Lanthanum; Lanthanum oxides; Niobium; Original Paper; Perovskites; Physics; Physics and Astronomy; Room temperature; Sol-gel processes; Thermal stability; Conductivity; Perovskite; Impedance spectroscopy; Rietveld analysis; Modulus; Sol–gel route
• ISSN: 0973-1458; 0974-9845
• DOI: 10.1007/s12648-023-03039-6

This paper discusses the structural, microstructure and electrical properties of perovskite oxide lanthanum nickel LaNiO 3 , synthesized by the sol–gel reaction technique that was investigated. The prepared material was doped with bismuth and niobium and studied their properties. The Rietveld refinement of the X-ray diffraction pattern suggests that the compound has a monoclinic phase at room temperature with a P 2 1 / n space group. Scanning electron microscopy surface morphology analysis of the sample showed closed packing of grains with good density and very little porosity. The frequency-dependent modulus of the material is investigated in the temperature range from 200 K to 360 K and in range frequency between 1 kHz and 1 MHz. The Cole–Cole model is used to analyze the dielectric relaxation phenomenon. The complex impedance data are analyzed by an electrical equivalent circuit consisting of a resistance and a constant phase element, where the ideal capacitance part is replaced by a constant phase element. The frequency-dependent conductivity spectra follow the Jonscher power law. Nevertheless, the Arrhenius-type conduction mechanism was found to be active in the sample with activation energy of 0.168 eV. The electrical property of the sample was found to be independent of temperatures, making it a potential candidate for thermally stable capacitor application.