Influence of Thermal Annealing on Terahertz Dielectric Properties of ZnGeP2 Crystals

The influence of thermal annealing on the dielectric properties of ZnGeP 2 crystals in the terahertz frequency range is studied by terahertz time domain spectroscopy. The effect of “transformation” of a positive birefringent ZnGeP 2 crystal into a negative one is found upon transition from the IR to...

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Bibliographic Details
Published inRussian physics journal Vol. 64; no. 8; pp. 1513 - 1516
Main Authors Voevodin, V. I., Yudin, N. N., Sarkisov, S. Yu
Format Journal Article
LanguageEnglish
Published New York Springer US 01.12.2021
Springer Nature B.V
Subjects
Absorptivity
Annealing
Condensed Matter Physics
Crystals
Dielectric properties
Frequency ranges
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Refractivity
Terahertz frequencies
Theoretical
thermal annealing
ZnGeP
refractive index
terahertz time-domain spectroscopy
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Summary:The influence of thermal annealing on the dielectric properties of ZnGeP 2 crystals in the terahertz frequency range is studied by terahertz time domain spectroscopy. The effect of “transformation” of a positive birefringent ZnGeP 2 crystal into a negative one is found upon transition from the IR to the terahertz frequency range. A decrease of the absorption coefficients and refractive indices in the frequency range of 0.25–2.5 THz after annealing of the crystals at temperatures of 575–700°C for 300–400 hours is also revealed.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-021-02484-2