Sol–gel prepared ZnO:Al thin films for heterojunction diodes

Sol–gel method as a simple and low-cost approach is used to fabricate the heterostructures. Herein, Al-doped ZnO (AZO) thin films on p-Si subtrates are deposited via sol-gel method. AFM and SEM results reveal that the films have appreciably smooth surfaces. XRD results demonstrate that the films hav...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 32; no. 6; pp. 7791 - 7800
Main Authors Goktas, O. F., Koksal, N. E., Kaplan, O., Yildiz, A.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.03.2021
Springer Nature B.V
Subjects
Aluminum
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal structure
Diodes
Electrical properties
Heterojunctions
Heterostructures
Materials Science
Optical and Electronic Materials
Silicon
Sol-gel processes
Thin films
Zinc oxide
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Summary:Sol–gel method as a simple and low-cost approach is used to fabricate the heterostructures. Herein, Al-doped ZnO (AZO) thin films on p-Si subtrates are deposited via sol-gel method. AFM and SEM results reveal that the films have appreciably smooth surfaces. XRD results demonstrate that the films have highly oriented crystal structure, and the doping process is successfully performed. The analysis of I–V measurement characteristics unveils a nonideal diode behavior of AZO/Si heterojunctions. Considering the electrical properties, the device with AZO layer of 80 nm demonstrates a good rectifying behavior with rectification ratio of 926 at ± 4 V. The fabricated devices can be thought as diode for real applications. This investigation offers a paradigm for fabricating diodes from traditional semiconductor films.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-05498-1