Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation

• Published in: Journal of electronic materials Vol. 49; no. 9; pp. 5232 - 5239
• Main Authors: Nishio, Johji, Okada, Aoi, Ota, Chiharu, Kushibe, Mitsuhiro
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.09.2020; Springer Nature B.V
• Subjects: 18th Conference on Defects-Recognition; Aluminum; Burgers vector; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-sections; Dislocation loops; Electroluminescence; Electronics and Microelectronics; Image resolution; Imaging and Physics in Semiconductors (DRIP XVIII); Instrumentation; Materials Science; Optical and Electronic Materials; Photoluminescence; PIN diodes; Position measurement; Scanning transmission electron microscopy; Secondary ion mass spectrometry; Solid State Physics; Stacking faults; Tetrahedra; Topical Collection: 18th Conference on Defects (DRIP XVIII); Transmission electron microscopy; partial dislocation; 4H-SiC; forward degradation; single Shockley stacking fault
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-020-08133-7

The structure of partial dislocations (PDs), which surround triangular single Shockley stacking faults (1SSFs) expanded during electroluminescence observation in a 4H-SiC PiN diode, is investigated by photoluminescence (PL) imaging, PL spectroscopy, plan-view transmission electron microscopy (TEM) imaging, g · b analysis, cross-sectional bright-field scanning TEM (BF-STEM) imaging, and high-resolution high-angle annular dark-field (HAADF)-STEM imaging. The zigzag configuration is found on the upstanding side of the triangular 1SSF by plan-view TEM imaging, while it is observed as a single line by PL imaging. Using g · b analysis, the zigzag line is confirmed to be constructed by 30° and 90° PDs. Cross-sectional BF-STEM observation proved that the expanding 1SSF penetrates through the p – n interface whose position was estimated from secondary-ion mass spectrometry (SIMS) depth profile measurements of the aluminum and nitrogen concentrations. This provides experimental evidence that the 1SSF loses its driving force for recombination-enhanced dislocation glide when it stops somewhere in the p -layer where sufficient electrons no longer exist. Using cross-sectional HAADF-STEM observation, core species of the PDs were analyzed and the Burgers vector for the dislocation loop uniquely determined. Also, the first experimental observation of a 90° silicon-core PD, reported so far, is confirmed. According to these PD analyses, the possible atomic arrangement around the 1SSF is examined and the way tetrahedrons face across each PD is summarized, based on HAADF-STEM analysis of the 1SSF line.