Electrodeposition and characterization of copper sulfide (CuS) thin film: towards an understanding of the growth mechanism

• Published in: Journal of solid state electrochemistry Vol. 27; no. 8; pp. 2051 - 2065
• Main Authors: Ait-karra, A., Zakir, O., Ait baha, A., Lasri, M., Idouhli, R., Elyaagoubi, M., Abouelfida, A., Khadiri, M., Benzakour, J.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.08.2023; Springer Nature B.V
• Subjects: Analytical Chemistry; Austenitic stainless steels; Characterization and Evaluation of Materials; Chemistry; Chemistry and Materials Science; Condensed Matter Physics; Copper sulfides; Covellite; Electrochemical analysis; Electrochemical impedance spectroscopy; Electrochemistry; Electrodeposition; Energy Storage; Original Paper; Physical Chemistry; Raman spectroscopy; Spectroscopic analysis; Spectrum analysis; Substrates; Sulfuric acid; Thickness; Thin films; CuS; Cyclic voltammetry; Pulse electrodeposition; Growth mechanism; Mott–Schottky; Thin film
• ISSN: 1432-8488; 1433-0768
• DOI: 10.1007/s10008-023-05471-4

Copper sulfide (CuS) thin film was electrodeposited onto stainless steel (SS 316L) substrate under pulse potential control, from an aqueous acidic solution containing 10 −3  M of CuSO 4 .5H 2 O and 10 −2  M of SC(NH 2 ) 2 . The solution pH was maintained at 2.2 ± 0.1 by adding a few microliters of 0.1 M H 2 SO 4 solution. The electrodeposited thin film was grown at 30 °C by applying a forward potential ( E F ) of − 0.85 V vs Ag/AgCl for 0.2 s and a reverse potential ( E R ) of 0 V vs Ag/AgCl for 0.4 s. Cyclic voltammetry (CV) was used to determine E F and E R as well as the possible reactions that occurred in the studied system and to understand the electrochemical behavior of the SS 316 L substrate on the deposition solutions. Normal and grazing incidence X-ray diffraction (XRD), Raman spectroscopy, and energy-dispersive analysis of X-ray (EDAX) techniques showed that the obtained thin film, applying E F and E R , was a hexagonal covellite CuS. Scanning electron microscopy (SEM) analysis showed that the obtained CuS film is grainy and contained some cracks. Profilometry indicated that the elaborated film has a thickness of 7.85 ± 0.71 µm. Electrochemical impedance spectroscopy (EIS) and Mott–Schottky (MS) analysis were performed, but the results are controversial because of the participation of SS 316 L substrate in the behavior of the obtained data. Graphical Abstract