Optical single layer lift-off process
The lithography of the metal wiring layers is becoming the most confining technology in the era of VLSI (very large-scale integration), as more and more circuits have to be wired on the chip itself. The two competing technologies are subtractive etch (wet or dry), and additive metal lift-off. As lif...
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Published in | IEEE transactions on electron devices Vol. 32; no. 3; pp. 672 - 676 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.01.1985
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | The lithography of the metal wiring layers is becoming the most confining technology in the era of VLSI (very large-scale integration), as more and more circuits have to be wired on the chip itself. The two competing technologies are subtractive etch (wet or dry), and additive metal lift-off. As lift-off needs no etching, it inherently offers cost and density advantages. It, however, requires an undercut photoresist profile. These undercuts can be achieved with an image-reversal process. The paper describes such a reversal process, especially tuned for lift-off applications. The result is a simple single-layer lift-off technology with excellent image quality. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1985.21997 |