A boosted enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a 3-dimensional nanocone-shaped platform
We report on dramatically enhanced light extraction from GaN-based light-emitting diodes (LEDs) with a 3-dimensional nanocone-shaped platform on a p -GaN surface. The nanocone-shaped platform LEDs were fabricated by using nanoimprint lithography (NIL) with a flexible nanostamp replicated from a well...
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Published in | Journal of the Korean Physical Society Vol. 62; no. 1; pp. 1 - 5 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Seoul
The Korean Physical Society
2013
한국물리학회 |
Subjects | |
Online Access | Get full text |
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Summary: | We report on dramatically enhanced light extraction from GaN-based light-emitting diodes (LEDs) with a 3-dimensional nanocone-shaped platform on a
p
-GaN surface. The nanocone-shaped platform LEDs were fabricated by using nanoimprint lithography (NIL) with a flexible nanostamp replicated from a well-ordered anodic alumina template. These soft lithographic approaches make it possible to pattern efficiently over a large area with a high-resolution. When we compared our LEDs with a nanocone-shaped platform to other conventional planar LEDs, unexpectedly, we observed boosted light extraction from the LEDs with a nanocone-shaped platform. That is mainly ascribed to the engraved nanocone-shaped patterns on the
p
-GaN surface, which provided a more favorable environment for photon extraction. |
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Bibliography: | G704-000411.2013.62.1.033 |
ISSN: | 0374-4884 1976-8524 |
DOI: | 10.3938/jkps.62.1 |