A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements

• Published in: Journal of materials science. Materials in electronics Vol. 34; no. 28; p. 1909
• Main Authors: Güçlü, Ç. Ş., Tanrıkulu, E. Erbilen, Dere, A., Altındal, Ş., Azizian-Kalandaragh, Y.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.10.2023; Springer Nature B.V
• Subjects: Capacitance; Characterization and Evaluation of Materials; Chemistry and Materials Science; Conduction bands; Density distribution; Diodes; Electrical measurement; Energy consumption; Graphene; Interlayers; Leakage current; Low frequencies; Materials Science; Optical and Electronic Materials; Photonics; Radiation; Schottky diodes
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-11302-z

In this study, both the Au/(ZnCdS:GO(1:1) doped PVP)/n-Si and Au/(ZnCdS:GO(1:0.5) doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were fabricated onto the same n-Si wafer to determine effect of the rates of them using the I–V and C/G-V measurements. The basic electrical-parameters of them such as reverse-saturation current ( I s ), ideality-factor ( n ), barrier-height (Φ B ), rectification-ratio (RR), series/shunt resistances ( R S , and R sh ) values, were calculated from the I–V data-based on thermionic-emission (TE) theory. The voltage dependence of surface -states profile was obtained from both the forward-bias I–V data (by considering voltage dependence of n , BH) and high–low frequency capacitance ( C LF –C HF ) methods for two SDs and were compared. These results indicate that SD2 has a lower leakage current and higher RR, R sh , and BH than SD1 diode. On the other hand, the values of N ss with the same order (∼10 12 –10 13  eV −1  cm 2 ) for two SDs getting increases from the mid-gap of the semiconductor toward the bottom of the conduction band and change from region to region due to a particular density distribution of them in the bandgap. Both the voltage-dependent profile of N ss and R s was also extracted from the C/G-V data by using Nicollian–Brews and high–low frequency capacitance method, respectively, and the values of them for SD2 are lower than the SD1 in the whole measured voltage range.