Successive layer-by-layer deposition of metal (Mo, Ag)/BN/MoS2 nanolaminate films and the electric properties of BN/MoS2 heterostructure on different metal substrates

• Published in: Journal of materials science. Materials in electronics Vol. 31; no. 12; pp. 9559 - 9567
• Main Authors: Xiong, Fen, Jiang, Siyu, Wu, Jun, Guo, Caisheng, Zhu, Bailin, Geng, Renjie, Gan, Zhanghua, Yao, Yagang
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.06.2020; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Deposition; Electric properties; Electrical resistivity; Electrode materials; Electrodes; Electronic devices; Heterostructures; Low temperature; Magnetron sputtering; Materials Science; Molybdenum disulfide; Morphology; Optical and Electronic Materials; Photovoltaic cells; Room temperature; Silver; Substrates
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-020-03498-1

In this work, the M/MoS 2 and M/BN/MoS 2 (M = Ag or Mo) nanolaminate films were prepared by RF magnetron sputtering via successive layer-by-layer deposition at room temperature, followed by annealing at 500 °C. And then, the BN/MoS 2 heterostructure with clean and tight interface were successfully prepared on different metal electrode layers. The results show that the first deposited metal (Mo or Ag) layer strongly influences the morphology of the top MoS 2 layer, while inserting a BN layer promotes its influence. The results of electric property test indicate the resistivity of the Mo/BN/MoS 2 film at the linear part of E – J curve is higher than that of Ag/BN/MoS 2 film but the Mo/MoS 2 film is lower than the Ag/MoS 2 film in total resistivity, confirming Mo is more suitable than Ag as the electrode material for the MoS 2 -BN based two-dimensional (2D) electronic devices. This work supplies a simple way for the low-temperature continuous fabrication of 2D MoS 2 -BN-based integrated devices.