Non-toxic materials for high efficiency thin-film solar cells: CZTSSe with In2S3 buffer layer

Thin-film solar cells based on Cu 2 ZnSn(S,Se) 4 (CZTSSe) are a promising technology for developing high-efficiency photo voltaic cells. These cells have excellent optical properties, a high absorption coefficient of over 10 4  cm −1 , and are made from abundant, non-toxic materials. The bandgap of...

Full description

Saved in:
Bibliographic Details
Published inIndian journal of physics Vol. 98; no. 13; pp. 4483 - 4496
Main Authors Yadav, Shweta, Chauhan, R. K., Mishra, Rajan, Kumar, Saurabh
Format Journal Article
LanguageEnglish
Published New Delhi Springer India 01.12.2024
Springer Nature B.V
Subjects
Absorptivity
Astrophysics and Astroparticles
Buffer layers
Efficiency
Hazardous materials
Impact resistance
Open circuit voltage
Optical properties
Original Paper
Photovoltaic cells
Physics
Physics and Astronomy
Short circuit currents
Shunt resistance
Solar cells
Temperature effects
Thickness
Thin films
Zinc selenide
Solar cell
Buffer layer
CZTSSe
Thin film
Online AccessGet full text

Cover

More Information
Summary:Thin-film solar cells based on Cu 2 ZnSn(S,Se) 4 (CZTSSe) are a promising technology for developing high-efficiency photo voltaic cells. These cells have excellent optical properties, a high absorption coefficient of over 10 4  cm −1 , and are made from abundant, non-toxic materials. The bandgap of CZTSSe can be adjusted between 1.0 to 1.5 eV. The objective of the present study was to investigate the performance of CZTSSe-based solar cells using In 2 S 3 and ZnSe buffer layers in place of the toxic CdS buffer layer. The study employed SCAPS software to simulate variations in the absorber and buffer layer thickness and doping concentration. As well as the effects of temperature, series/shunt resistance, and their impact on short-circuit current density, open-circuit voltage, fill factor, and efficiency on device performance are discussed. Results show that CZTSSe solar cells with In 2 S 3 as a buffer and MoS 2 as an HTL layer performed better, particularly at lower thicknesses. An 80-nm-thick In 2 S 3 buffer layer demonstrated the highest efficiency of 24.42%, compared to 23.55% for the ZnSe buffer layer. These findings suggest that In 2 S 3 is a promising alternative buffer layer for CZTSSe-based solar cells that can result in higher efficiency.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0973-1458
0974-9845
DOI:10.1007/s12648-024-03194-4