Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures

This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure...

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Published inJournal of materials science. Materials in electronics Vol. 32; no. 1; pp. 993 - 1006
Main Authors Akbaş, Ahmet Muhammed, Çiçek, Osman, Altındal, Şemsettin, Azizian-Kalandaragh, Y.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.01.2021
Springer Nature B.V
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Summary:This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure such as diffusion potential ( V D ), doping donor density ( N D ), Fermi energy level ( E F ), maximum electric field ( E m ), depletion layer thickness ( W d ), and barrier height ( Φ B ) are derived by using the intercept and slope of C −2 –V–ƒ plot for each frequency. Additionally, the energy density distribution of surface states ( N ss ) and their relaxation time values (τ) are also attained from the conduction method and their values are found as 4.999 × 10 12  eV −1  cm −2 and 2.92 µs at 0.452 eV, and 3.857 × 10 12  eV −1  cm −2 and 164 µs at 0.625 eV, respectively. The lower N ss values are the consequence of passivation effect of the used nanographite (NG)-PVP polymer interlayer. As a result, the polymer interlayer based nanographite (NG)-PVP is candidate instead of the widely used oxide/insulator layer for the purpose of decreasing the surface states or dislocations.
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ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-04875-6