Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET

In this study, we present an ambipolar conduction and RF stability performance for a Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET (Ge(SRC)-DH-DD-TM-SG-TFET). The energy band diagram of the device will be derived using the Stern Stability Factor. The minimum...

Full description

Saved in:
Bibliographic Details
Published inSILICON Vol. 13; no. 3; pp. 911 - 918
Main Authors Venkatesh, M., Priya, G. Lakshmi, Balamurugan, N. B.
Format Journal Article
LanguageEnglish
Published Dordrecht Springer Netherlands 01.03.2021
Springer Nature B.V
Subjects
Chemistry
Chemistry and Materials Science
Circuits
Dielectrics
Doping
Efficiency
Electric fields
Energy bands
Engineering schools
Environmental Chemistry
Germanium
Hafnium oxide
Inorganic Chemistry
Lasers
Materials Science
Optical Devices
Optics
Original Paper
Photonics
Polymer Sciences
Silicon
Silicon dioxide
Simulation
Stability
Transconductance
Transient response
Cut-off frequency
Ambipolar current
Analog performance
Radio frequency parameters
Triple material
Online AccessGet full text

Cover

More Information
Summary:In this study, we present an ambipolar conduction and RF stability performance for a Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET (Ge(SRC)-DH-DD-TM-SG-TFET). The energy band diagram of the device will be derived using the Stern Stability Factor. The minimum tunneling length is expressed using low-k Silicon dioxide (SiO 2 ) and high-k Hafnium oxide (HfO 2 ) as dual dielectric material. Then the band to band tunneling (BTBT) rate tunneling generation rate will be derived using Kane’s model. In terms of frequency efficiency the proposed device with SiO 2 /HfO 2 as gate dielectric is good enough to attain high cut-off frequency (f T ) of 94.22 GHz is observed at drain to source voltage of V DS  = 1 V. Efforts have also been made to properly assess the potential of the two halo doped regions regions. An expression for transconductance is proposed and the model is validated using 3-D Silvaco Atlas TCAD device simulator. In addition, to demonstrate the advantage of using Ge(SRC)-DH-DD-TM-SG-TFET dual dielectric halo doping in circuit applications, the transient response of the conventional TFET germanium source is compared with the low and high-k dielectric halo doping Ge(SRC) TFET.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-020-00856-w