Impact of Ni doping on the structural, morphological, electrical and optical properties of SnO2 thin films by spray pyrolysis technique

• Published in: Applied physics. A, Materials science & processing Vol. 127; no. 12
• Main Authors: Tamizhmani, Indira Gandhi, Sakthivel, Raja, Ramraj, Ramesh Babu, Mukannan, Arivanandhan
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.12.2021; Springer Nature B.V
• Subjects: Applied physics; Carrier density; Characterization and Evaluation of Materials; Condensed Matter Physics; Doping; Electrical resistivity; Gas sensors; Grain size; Machines; Manufacturing; Materials science; Morphology; Nanotechnology; Nickel; Optical and Electronic Materials; Optical properties; Optoelectronics; Photoluminescence; Physics; Physics and Astronomy; Processes; Soda-lime glass; Spray pyrolysis; Structural analysis; Surfaces and Interfaces; Thin Films; Tin dioxide; Transmittance; Thin films; Electrical and optical properties; XPS; Spray pyrolysis; XRD; SnO
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-021-05091-7

This work deals with the impact of Ni doping on the structural, morphological, electrical and optical characteristics of SnO 2 thin films, deposited on soda-lime glass microslides (75 mm × 25 mm × 1.2 mm) at 400 °C by facile spray pyrolysis technique. The structural analysis (XRD) confirms that the prepared Ni:SnO 2 thin films belong to the tetragonal rutile structure. The preferred growth orientation along the (211) and (301) planes shifted to the (200) plane due to the Ni dopant concentration. Scanning electron microscopic analysis reveals that the grain size is effectively modified by various nickel concentration in the films. XPS measurement indicates the presence of Sn 4+ and Ni 2+ in 3.0 at.% Ni:SnO 2 thin film. The electrical studies reveal that all the films show n-type conductivity. The lowest resistivity (2.4 × 10 –3 Ω cm), high carrier concentration (1.267 × 10 20  cm −3 ) and high mobility (120 cm 2 /V s) are obtained for undoped SnO 2 thin films. A slight variation in the resistivity and carrier concentration is observed for Ni-doped SnO 2 films. The optical transmittance of 2.0 at.% Ni:SnO 2 film shows maximum transmittance than undoped SnO 2 film. The photoluminescence spectrum of undoped SnO 2 and Ni:SnO 2 thin films, excited at the wavelength of 325 nm, consists of the strong near band emission at 398 nm. The obtained result shows that 2.0 at.% Ni:SnO 2 film has high optical and electrical conductivity; this could be useful in optoelectronic and gas sensing applications.