Structural, electronic and optical properties of GeX (X = N, P and As) monolayer: under stress and strain conditions

• Published in: Optical and quantum electronics Vol. 53; no. 9
• Main Authors: Niasadegh, Noureddin, Naseri, Mosayeb, Rezaee, Sahar
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.09.2021; Springer Nature B.V
• Subjects: Blue shift; Characterization and Evaluation of Materials; Compressive properties; Computer Communication Networks; Conduction bands; Density functional theory; Doppler effect; Electrical Engineering; Energy gap; First principles; Lasers; Monolayers; Optical Devices; Optical properties; Optics; Optoelectronics; Photonics; Physics; Physics and Astronomy; Red shift; Tensile strain; Band structure; First principles calculation; Electronic properties; Stress and strain effects; Optical properties; GeX monolayers; Band gap

Applying first-principles of Density Functional Theory, the current study aims to discover optical, structural and electronic features of two-dimensional (2D) hexagonal structure of IV–V binary monolayer compounds, GeX (X = N, P and As) under the conditions of stress and strain. The findings reveale...