n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation

• Published in: Applied physics. A, Materials science & processing Vol. 126; no. 11
• Main Authors: Katamune, Yūki, Mori, Daichi, Arikawa, Daisuke, Izumi, Akira, Shimaoka, Takehiro, Ichikawa, Kimiyoshi, Koizumi, Satoshi
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.11.2020; Springer Nature B.V
• Subjects: Applied physics; Atomic properties; Characterization and Evaluation of Materials; Chemical vapor deposition; Condensed Matter Physics; Diamond films; Doping; Electronic devices; Epitaxial growth; Filaments; Hall effect; Machines; Manufacturing; Materials science; N-type semiconductors; Nanotechnology; Optical and Electronic Materials; Phosphorus; Physics; Physics and Astronomy; Processes; Rapid Communications; Secondary ion mass spectrometry; Surfaces and Interfaces; Thin Films; Tungsten; Vapor phases; Diamond; Hall effect; Hot-filament CVD; n-type doping; Secondary-ion mass spectrometry
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-020-04060-w

Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 10 18 –10 19  cm −3 from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 10 18  cm −3 from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 10 18  cm −3 .