Ultrasound-Assisted Method for Preparation of Ag2S Nanostructures: Fabrication of Au/Ag2S-PVA/n-Si Schottky Barrier Diode and Exploring Their Electrical Properties

• Published in: Journal of electronic materials Vol. 49; no. 1; pp. 444 - 453
• Main Authors: Badali, Y., Azizian-Kalandaragh, Y., Akhlaghi, Ehsan A., Altındal, Ş.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.01.2020; Springer Nature B.V
• Subjects: Bias; Characterization and Evaluation of Materials; Chemistry and Materials Science; Dielectric properties; Electric potential; Electrical properties; Electronics and Microelectronics; Gold; Grain size; Instrumentation; Interlayers; Materials Science; Measuring instruments; Optical and Electronic Materials; Quantum confinement; Rectifiers; Scanning electron microscopy; Schottky diodes; Shunt resistance; Silver; Solid State Physics; Ultrasonic imaging; Ultrasonic methods; Ultrasonic testing; Visible spectrum; Voltage; X-ray diffraction; surface states; Au/Ag2S-PVA; ultrasound-assisted method; Schottky barrier diode; Si
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-019-07708-3

Au/ n -Si metal/semiconductor (MS) Schottky barrier diodes with and without (Ag 2 S-PVA) interlayer were prepared by the ultrasound-assisted method and their electric and dielectric properties were examined by using current–voltage ( I – V ) and capacitance–voltage ( C – V ) measuring devices. The structural, optical and morphological characteristics of the (Ag 2 S-PVA) were studied by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy. The observed peaks in the XRD pattern are related to the α -phase of silver sulfide. The UV–Visible spectrum of (Ag 2 S-PVA) shows the quantum confinement and SEM image proves the grain size in nano-scale. The ideality factor ( n ) and barrier height (BH) at zero bias (Φ B0 ( I – V )) were acquired from the I – V data. On the other hand; Fermi energy ( E F ), donor concentration atoms ( N D ), and BH (Φ B ( C – V )) values were obtained from the reverse bias C – V data. The voltage-dependent resistance profile (Ln( R i )– V ) was obtained by applying Ohm’s law and also by the Nicollian–Brews methods. Also, considering the voltage-dependent n and BH, N ss –( E c – E ss ) profile was acquired from the forward biases I – V characteristics. Depending on high, intermediate and low biases ln( I )–Ln( V ) curves have three linear regions with distinct slopes for MS and MPS structures. The predominant current-transport mechanisms were obtained in related regions via trap-charge limited current and space-charge limited current, respectively. These outcomes indicate that the (Ag 2 S-PVA) interlayer enhanced the performance of the diode considerably in terms of high rectifier rate (RR), shunt resistance ( R sh ), and low surface states ( N ss ) and series resistance ( R s ). Thus, the (Ag 2 S-PVA) interlayer can be used in MS type diode instead of a traditional insulator layer.