Role of Mn/Cr dual-doped ZnO nanoparticles of diluted magnetic semiconductors: influence on structural and electrical properties

• Published in: Applied physics. A, Materials science & processing Vol. 127; no. 12
• Main Authors: Ibrahim, S., Morsi, Reham M. M., Abo-Naf, S. M.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.12.2021; Springer Nature B.V
• Subjects: Applied physics; Characterization and Evaluation of Materials; Chemical bonds; Condensed Matter Physics; Dilution; Electrical properties; Electrical resistivity; Electronic devices; Fourier transforms; Frequency ranges; Infrared spectroscopy; Machines; Magnetic properties; Magnetic semiconductors; Manufacturing; Materials science; Nanoparticles; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Semiconductor materials; Sol-gel processes; Spectrum analysis; Surfaces and Interfaces; Thin Films; Wurtzite; Zinc oxide; Electrical properties; Sol–gel process; Structural properties; Zinc oxide nanoparticles; Doping
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-021-05056-w

Sol–gel method was used to successfully produce dilute magnetic semiconductor ( Zn 1 - x - y Mn x Cr y O) nanoparticles. Fourier transforms infrared spectroscopy (FTIR) and electrical conductivity tests were used to investigate the structural and electrical properties of the prepared samples. FTIR spectra are used to examine the functional chemical bonding properties of various elements and compounds found in materials. The dopant's incorporation into the ZnO framework structure is confirmed by FTIR spectra. The dominance of the Mn–O or Cr–O interaction in the Zn–O–Mn or Zn–O–Cr bonds may result from an increase in Mn or Cr concentration in the wurtzite structure, which could lead to structural stress and defects. Within the frequency range of 0.042 kHz–1 MHz and the temperature range of 298–573(K), the conductivity (σ ac ) was measured. The increase in conductivity values is more pronounced for samples with lower doping concentrations of Mn and Cr. The maximum σ ac value is reached in the sample with 1.5% Mn and 0.5% Cr. The maximum ɛʹ value reached in the sample with 10% Cr. The prepared samples are considered as candidates for semiconductor materials in electronic devices.