High-Efficiency 808-nm InGaAlAs-AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures
The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 1...
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Published in | IEEE photonics technology letters Vol. 20; no. 8; pp. 566 - 568 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
15.04.2008
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm 2 and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm -1 and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mum stripe widths 808-nm-emitting laser diodes with 1000-mum cavity length. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2008.918857 |