High-Efficiency 808-nm InGaAlAs-AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures

• Published in: IEEE photonics technology letters Vol. 20; no. 8; pp. 566 - 568
• Main Authors: Li, Lin, Liu, Guojun, Li, Zhanguo, Li, Mei, Li, Hui, Wang, Xiaohua, Wan, Chunming
• Format: Journal Article
• Language: English
• Published: New York IEEE 15.04.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Asymmetric waveguide; Diode lasers; Molecular beam epitaxial growth; molecular beam epitaxy; Optical losses; Optical waveguides; Power conversion; Power lasers; quantum efficiency; Semiconductor lasers; Semiconductor waveguides; Stimulated emission; Waveguide lasers
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2008.918857

The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm 2 and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm -1 and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mum stripe widths 808-nm-emitting laser diodes with 1000-mum cavity length.