Synthesis, growth, and two-photon absorption induced optical limiting action of cytosinium benzoate single crystal
Two-photon absorption induced optical limiting action was demonstrated in cytosinium benzoate (CB) under nanosecond laser (532 nm, 9 ns, and 10 Hz) excitation. Intensity dependent open aperture Z-scan experiment exposed the presence of reverse saturable absorption ascribed due to sequential two-phot...
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Published in | Journal of materials science. Materials in electronics Vol. 33; no. 22; pp. 17502 - 17512 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
01.08.2022
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Two-photon absorption induced optical limiting action was demonstrated in cytosinium benzoate (CB) under nanosecond laser (532 nm, 9 ns, and 10 Hz) excitation. Intensity dependent open aperture Z-scan experiment exposed the presence of reverse saturable absorption ascribed due to sequential two-photon absorption. Initially CB single crystals were grown at room temperature by slow evaporation solution technique. Single crystal XRD shows that CB belongs to monoclinic crystal system with
P2
1
/c
space group. Fourier Transform Infrared spectrum was recorded to identify the presence of functional groups. Thermal studies shows that the crystal is stable upto 168 °C. Vickers microhardness studies confirm that the grown crystal was belongs to soft material category. Etching study shows linear rectangular etch patterns (5 s) and well defined stacking planes (10 s) for water etchant. Optical studies demonstrate that CB crystal possess lower cut-off (287 nm) and moderate linear transmittance in visible region. The optical energy band gap of CB crystal was estimated from photoluminescence studies as 3.1 eV. CB with higher two-photon absorption coefficient (1.26 × 10
–10
m/W) and lower onset limiting threshold (1.92 × 10
12
W/m
2
) can be a potential candidate for developing laser safety devices under nanosecond green laser excitation regime. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-022-08607-w |