Structural, Optical and Dielectric Properties of Aluminoborosilicate Glasses
Glass samples with composition 50AO-5Al 2 O 3 -30B 2 O 3 -15SiO 2 (A = Ba, Sr, Ca, Zn) have been synthesized by conventional melt quenching technique. The amorphous nature of glasses has been confirmed from the x-ray diffraction patterns. The structural behavior of the glasses investigated using Fou...
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Published in | Journal of electronic materials Vol. 49; no. 1; pp. 695 - 704 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
2020
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Glass samples with composition 50AO-5Al
2
O
3
-30B
2
O
3
-15SiO
2
(A = Ba, Sr, Ca, Zn) have been synthesized by conventional melt quenching technique. The amorphous nature of glasses has been confirmed from the x-ray diffraction patterns. The structural behavior of the glasses investigated using Fourier transform infrared spectra show a number of absorption peaks due to the bending of Si-O-B linkages, stretching vibrations of Si-O-Si and B-O-B in SiO
4
and BO
4
structural units, respectively. The Fourier Transform Raman spectra of all glasses exhibit different spectral bands and intensities of all bands change with the doping of cations (Ba
2+
, Sr
2+
, Ca
2+
and Zn
2+
).The optical properties studied using UV–visible absorption spectra, give Urbach energy values in the range 0.51–0.59 eV. The microhardness of the glass samples measured by indentation technique shows a higher value for all glasses (7.68–9.25) GPa, reflecting higher bond strength. The co-efficient of thermal expansion of the glasses lies within the range 8.5–11.5 × 10
−6
°C
−1
. Dielectric constant varies from 3.4 to 1.6 and dielectric loss from 0.0016 to 0.0342 at 1 MHz for 50AO-5Al
2
O
3
-30B
2
O
3
-15SiO
2
(A = Ba, Sr, Ca, Zn) glasses. The good thermal, mechanical and dielectric properties show that these glasses can be considered as suitable candidates for interlayer dielectrics in microelectronic applications. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-019-07674-w |