Structural, Optical and Dielectric Properties of Aluminoborosilicate Glasses

Glass samples with composition 50AO-5Al 2 O 3 -30B 2 O 3 -15SiO 2 (A = Ba, Sr, Ca, Zn) have been synthesized by conventional melt quenching technique. The amorphous nature of glasses has been confirmed from the x-ray diffraction patterns. The structural behavior of the glasses investigated using Fou...

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Bibliographic Details
Published inJournal of electronic materials Vol. 49; no. 1; pp. 695 - 704
Main Authors Salinigopal, M. S., Gopakumar, N., Anjana, P. S., SureshKumar, B.
Format Journal Article
LanguageEnglish
Published New York Springer US 2020
Springer Nature B.V
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Summary:Glass samples with composition 50AO-5Al 2 O 3 -30B 2 O 3 -15SiO 2 (A = Ba, Sr, Ca, Zn) have been synthesized by conventional melt quenching technique. The amorphous nature of glasses has been confirmed from the x-ray diffraction patterns. The structural behavior of the glasses investigated using Fourier transform infrared spectra show a number of absorption peaks due to the bending of Si-O-B linkages, stretching vibrations of Si-O-Si and B-O-B in SiO 4 and BO 4 structural units, respectively. The Fourier Transform Raman spectra of all glasses exhibit different spectral bands and intensities of all bands change with the doping of cations (Ba 2+ , Sr 2+ , Ca 2+ and Zn 2+ ).The optical properties studied using UV–visible absorption spectra, give Urbach energy values in the range 0.51–0.59 eV. The microhardness of the glass samples measured by indentation technique shows a higher value for all glasses (7.68–9.25) GPa, reflecting higher bond strength. The co-efficient of thermal expansion of the glasses lies within the range 8.5–11.5 × 10 −6 °C −1 . Dielectric constant varies from 3.4 to 1.6 and dielectric loss from 0.0016 to 0.0342 at 1 MHz for 50AO-5Al 2 O 3 -30B 2 O 3 -15SiO 2 (A = Ba, Sr, Ca, Zn) glasses. The good thermal, mechanical and dielectric properties show that these glasses can be considered as suitable candidates for interlayer dielectrics in microelectronic applications.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07674-w