Structural, Optical, Dielectric and Electrical Properties of Al-Doped ZnSe Thin Films

In this work, the heavy aluminum doping effects on the compositional, structural, optical, dielectric and electrical properties of ZnSe thin films are investigated. It is observed that the Zn/Se compositional ratio increases with increasing Al content. The major cubic phase of ZnSe becomes more pron...

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Bibliographic Details
Published inJournal of electronic materials Vol. 48; no. 6; pp. 3519 - 3526
Main Authors Kayed, T. S., Qasrawi, A. F., Elsayed, Khaled A.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.06.2019
Springer Nature B.V
Subjects
Aluminum
Capacitance
Characterization and Evaluation of Materials
Chemistry and Materials Science
Dielectric properties
Doping
Electrical properties
Electrical resistivity
Electronics and Microelectronics
Energy gap
Hexagonal phase
Instrumentation
Lattice parameters
Materials Science
Optical and Electronic Materials
Optical properties
Optoelectronics
Physical properties
Selenium
Solid State Physics
Thin films
Zinc selenide
negative capacitance
ZnSe
Aluminum-doping
optical
dielectric
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Summary:In this work, the heavy aluminum doping effects on the compositional, structural, optical, dielectric and electrical properties of ZnSe thin films are investigated. It is observed that the Zn/Se compositional ratio increases with increasing Al content. The major cubic phase of ZnSe becomes more pronounced compared to the hexagonal phase. In addition, the presence of Al in the structure of ZnSe causes lattice constant contraction, decreased the grain size and increased both of the strain and defect density. Optically, the Al doping increased the light absorbability and widens both of the energy band gap and energy interbands which are present in the band gap of ZnSe films. Moreover, the Al doping into ZnSe lowers the high frequency dielectric constant and enhances the optical conductivity. On the other hand, the capacitance spectra which are studied in the frequency domain of 0.01–1.80 GHz displayed negative capacitance effect associated with resonance–antiresonance phenomena upon doping of ZnSe with Al. Such enhancements in the physical properties of ZnSe that are achieved via Al doping make the zinc selenide thin films more appropriate for electronic and optoelectronic technological applications.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07055-3