Design of narrow-band DBR planar filters in Si-BCB technology for millimeter-wave applications

This paper discusses a method used to design planar bandpass filters for millimeter-wave applications in U- and W-band frequency ranges. For technical reasons, these filters have to be implemented on silicon-based technology. So as to decrease the insertion losses levels inherent in silicon substrat...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 52; no. 3; pp. 1045 - 1051
Main Authors Prigent, G., Rius, E., Le Pennec, F., Le Maguer, S., Quendo, C., Six, G., Happy, H.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Band pass filters
Circuit topology
Design methodology
Distributed Bragg reflectors
Frequency
Insertion loss
Millimeter wave technology
Narrowband
Resonator filters
Silicon
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Summary:This paper discusses a method used to design planar bandpass filters for millimeter-wave applications in U- and W-band frequency ranges. For technical reasons, these filters have to be implemented on silicon-based technology. So as to decrease the insertion losses levels inherent in silicon substrate, we propose a thin-film microstrip-like technology implemented on a benzocyclobutene layer. In addition, a dual-behavior resonator-based filter topology enabled us to fit a hardened specification. In association with this new topology, we employed an automated design procedure that combines both circuit and full-wave simulations. It is based on a statistical sensitivity study performed by design-of-experiment analysis.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2004.823581