Enhanced visible-light photoresponse of DVT-grown Ni-doped SnSe crystal

• Published in: Journal of materials science. Materials in electronics Vol. 33; no. 13; pp. 10086 - 10095
• Main Authors: Gohil, Jagrutiba, Jethwa, Vibhutiba, Pathak, Vivek M., Solanki, Gunvant K., Chauhan, Payal, Patel, Alkesh B., Zankat, Chetan, Patel, Nashreen
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2022; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Computer networks; Crystal growth; Crystal structure; Electron microscopy; Gateways (computers); Materials Science; Microscopy; Nickel; Optical and Electronic Materials; Optoelectronic devices; Photoelectric effect; Stoichiometry
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-022-07998-0

Semiconductors with the group of IV-VI are key components of future photonics technology due to their unique properties. In the present study, we investigated the influence of nickel inclusion on the structural and electrical responsiveness of SnSe-layered crystals produced through direct vapour transport. The elemental composition, stoichiometry of grown crystals and the orthorhombic structure were investigated by EDAX and XRD analysis. The phase and high crystallinity of produced compounds are revealed by scanning electron microscopy and the SAED pattern of transmission electron microscopy. Nickel-doped SnSe photodetector exhibited a photocurrent of 53.83 nA, which is six times higher compared to the pristine SnSe. Moreover, the pristine and nickel-doped SnSe demonstrated excellent photoresponse behaviour under visible light. Additionally, important photodetection characteristics such as photoresponsivity ( R ), spectral detectivity ( D ), rise time and decay time are assessed. Our findings contribute to a better understanding of SnSe and Ni-doped SnSe-based photodetection capabilities which open up the future gateway for SnSe-based optoelectronic devices.