Silicon micromachining for high performance passive structures at W band

This paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter‐wave circuits. Appropriate 3D electromagnetic simulations based on the finite element method have been implemented to design the circuits. Coplanar transmission lines featuring loss level in...

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Bibliographic Details
Published inActive and passive electronic components Vol. 25; no. 1; pp. 113 - 122
Main Authors GUILLON, B, GRENIER, K, PARRA, T, PONS, P, CROS, D, BLONDY, P, GRAFFEUIL, J, CAZAUX, J. L, PLANA, R
Format Journal Article
LanguageEnglish
Published Abingdon Taylor and Francis 2002
Wiley
Subjects
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
High performance
Millimeter wave circuits
Coplanar transmission lines
Circuit design
Q factor
Micromachining
Passive circuit
Whispering gallery mode
Finite element method
Microelectronic fabrication
Cavity
W band
Transmission loss
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Summary:This paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter‐wave circuits. Appropriate 3D electromagnetic simulations based on the finite element method have been implemented to design the circuits. Coplanar transmission lines featuring loss level in the 2 dB range up to 105 GHz have been realized. An original silicon micromachined cavity using the whispering gallery modes properties has been realized achieving a quality factor close to 10,000 range at 95 GHz.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0882-7516
1563-5031
DOI:10.1080/08827510211278