IS THE REGIME WITH SHOT NOISE SUPPRESSION BY A FACTOR 1/3 ACHIEVABLE IN SEMICONDUCTOR DEVICES WITH MESOSCOPIC DIMENSIONS?

We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental data do not provide a conclusive result. On the basis of our numer...

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Bibliographic Details
Published inFluctuation and noise letters Vol. 11; no. 1; pp. 1240012 - 12140012
Main Authors MARCONCINI, P., MACUCCI, M., LOGOTETA, D., TOTARO, M.
Format Journal Article
LanguageEnglish
Published World Scientific Publishing Company 01.03.2012
Subjects
Devices
Diffusion
Disorders
Fluctuation
Mathematical models
Semiconductor devices
Shot noise
Transport
Fano factor
magnetic field
disordered conductor
strong localization
Diffusive regime
shot noise suppression
tunnel barriers
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Summary:We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental data do not provide a conclusive result. On the basis of our numerical analysis, we conclude that it is quite difficult to achieve diffusive transport over a reasonably wide parameter range, unless the device dimensions are increased up to the macroscopic scale where, however, shot noise disappears because the device length exceeds the Debye length. In addition, in the case of one-dimensional disorder, some mechanism capable of mode-mixing has to be present in order to reach or even approach the diffusive regime.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0219-4775
1793-6780
DOI:10.1142/S0219477512400123