Properties of ITO–AZO bilayer thin films prepared by magnetron sputtering for applications in thin-film silicon solar cells

• Published in: Applied physics. A, Materials science & processing Vol. 110; no. 1; pp. 41 - 45
• Main Authors: Wang, Chao, Mao, Yanli, Zeng, Xiangbo
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer-Verlag 2013; Springer
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Condensed Matter Physics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrooptical effects; Energy; Exact sciences and technology; Machines; Manufacturing; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanotechnology; Natural energy; Optical and Electronic Materials; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Photovoltaic conversion; Physics; Physics and Astronomy; Processes; Rapid Communication; Solar cells. Photoelectrochemical cells; Solar energy; Surfaces and Interfaces; Thin Films; Silicon Solar Cell; Front Electrode; Bilayer Thin Film; Amorphous Silicon Solar Cell; In2O3; Solar cells; Electrical conductivity; Amorphous semiconductors; Doping; Aluminium; Radiofrequency; Indium oxide; Thin films; Thickness; Cathode sputtering; Electro-optical effects; Tin oxide; Optical properties; Zinc oxide; Silicon; Bilayers
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-012-7431-3

In this paper we study the electro-optical behavior and the application of indium–tin oxide (ITO) and aluminum-doped zinc oxide (AZO) bilayer thin films for silicon solar cells. ITO–AZO bilayer thin films were deposited on glass substrates using radio-frequency magnetron sputtering. The experimental results show that a decrease in the electrical resistivity of the ITO–AZO bilayer thin films has been achieved without significant degradation of optical properties. In the best case the resistivity of the bilayer films reached a minimum of 5.075×10 −4  Ω cm when the thickness of the AZO buffer layer was 12 nm. The ITO–AZO bilayer films were applied as the front electrodes of amorphous silicon solar cells and the short-circuit current density of the solar cells was considerably increased.