Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs

In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). The source–gate–drain access regions with both AlBN and AlN amorphous dielectric films deposited by pulsed laser deposition are investigated to understand the...

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Bibliographic Details
Published inAIP advances Vol. 12; no. 7; pp. 075123 - 075123-5
Main Authors Cheng, Jiantao, Liu, Fengfeng, Jiang, Chunping, Zhu, Wenqing
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.07.2022
AIP Publishing LLC
Subjects
Aluminum gallium nitrides
Aluminum nitride
Gallium nitrides
High electron mobility transistors
Passivity
Pulsed laser deposition
Pulsed lasers
Thickness
Transconductance
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Summary:In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). The source–gate–drain access regions with both AlBN and AlN amorphous dielectric films deposited by pulsed laser deposition are investigated to understand their effects on the device performance. Compared with the AlN-passivated HEMTs, the electrical characteristics of AlBN-passivated HEMTs are significantly improved with the same passivation layer thickness. An increase in maximum drain saturation current of AlBN-passivated HEMTs is ∼19.74% at Vgs = 2 V, and the corresponding peak extrinsic transconductance is improved by 38.08% at Vgs = −2 V and Vds = 2 V. Such excellent properties are ascribed to large surface potential change, due to the effect of boron dopants on AlBN films.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0096290