Review of Silicon Carbide Power Devices and Their Applications

• Published in: IEEE transactions on industrial electronics (1982) Vol. 64; no. 10; pp. 8193 - 8205
• Main Authors: Xu She, Huang, Alex Q., Lucia, Oscar, Ozpineci, Burak
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2017; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Electronic devices; Junctions; MATERIALS SCIENCE; MOSFET; PIN photodiodes; Power converter; power device; review; Schottky diodes; Silicon; Silicon carbide; silicon carbide (SiC)

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and...