Review of Silicon Carbide Power Devices and Their Applications

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and...

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Bibliographic Details
Published inIEEE transactions on industrial electronics (1982) Vol. 64; no. 10; pp. 8193 - 8205
Main Authors Xu She, Huang, Alex Q., Lucia, Oscar, Ozpineci, Burak
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Electronic devices
Junctions
MATERIALS SCIENCE
MOSFET
PIN photodiodes
Power converter
power device
review
Schottky diodes
Silicon
Silicon carbide
silicon carbide (SiC)
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Summary:Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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USDOE
AC05-00OR22725
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2017.2652401