Review of Silicon Carbide Power Devices and Their Applications
Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and...
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| Published in | IEEE transactions on industrial electronics (1982) Vol. 64; no. 10; pp. 8193 - 8205 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.10.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper. |
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| AbstractList | Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper. Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon, SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. Our paper reviews the technology progress of SiC power devices and their emerging applications. Furthemore, the design challenges and future trends are summarized at the end of the paper. |
| Author | Ozpineci, Burak Lucia, Oscar Huang, Alex Q. Xu She |
| Author_xml | – sequence: 1 surname: Xu She fullname: Xu She email: xshe@ieee.org organization: Electr. Power, GE Global Res., Niskayuna, NY, USA – sequence: 2 givenname: Alex Q. surname: Huang fullname: Huang, Alex Q. email: aqhuang@ncsu.edu organization: North Carolina State Univ., Raleigh, NC, USA – sequence: 3 givenname: Oscar surname: Lucia fullname: Lucia, Oscar email: olucia@ieee.org organization: Electron. Eng. & Commun., Univ. of Zaragoza, Zaragoza, Spain – sequence: 4 givenname: Burak surname: Ozpineci fullname: Ozpineci, Burak email: burak@ornl.gov organization: Oak Ridge Nat. Lab., Univ. of Tennessee, Knoxville, TN, USA |
| BackLink | https://www.osti.gov/biblio/1394186$$D View this record in Osti.gov |
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| CODEN | ITIED6 |
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| Snippet | Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to... |
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| SubjectTerms | Electronic devices Junctions MATERIALS SCIENCE MOSFET PIN photodiodes Power converter power device review Schottky diodes Silicon Silicon carbide silicon carbide (SiC) |
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