Thermal equation of state of cubic silicon carbide at high pressures

• Published in: Chemphyschem Vol. 25; no. 9; p. e202300604
• Main Authors: Chanyshev, Artem, Martirosyan, Naira, Wang, Lin, Chakraborti, Amrita, Purevjav, Narangoo, Wang, Fei, Kim, Eun Jeong, Tang, Hu, Fedotenko, Timofey, Bhat, Shrikant, Farla, Robert, Katsura, Tomoo
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 02.05.2024
• Subjects: Bulk modulus; Crystal structure; Equations of state; Gruneisen parameter; High pressure; Silicon carbide; Thermal expansion; Zincblende; Silicon carbide; Synchrotron; Equation of state; Multi-anvil apparatus; High pressure

We have performed in situ X-ray diffraction measurements of cubic silicon carbide (SiC) with a zinc-blende crystal structure (B3) at high pressures and temperatures using multi-anvil apparatus. The ambient volume inferred from the compression curves is smaller than that of the starting material. Usi...