Thermal equation of state of cubic silicon carbide at high pressures

• Published in: Chemphyschem Vol. 25; no. 9; p. e202300604
• Main Authors: Chanyshev, Artem, Martirosyan, Naira, Wang, Lin, Chakraborti, Amrita, Purevjav, Narangoo, Wang, Fei, Kim, Eun Jeong, Tang, Hu, Fedotenko, Timofey, Bhat, Shrikant, Farla, Robert, Katsura, Tomoo
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 02.05.2024
• Subjects: Bulk modulus; Crystal structure; Equations of state; Gruneisen parameter; High pressure; Silicon carbide; Thermal expansion; Zincblende; Silicon carbide; Synchrotron; Equation of state; Multi-anvil apparatus; High pressure
• ISSN: 1439-4235; 1439-7641
• DOI: 10.1002/cphc.202300604

We have performed in situ X-ray diffraction measurements of cubic silicon carbide (SiC) with a zinc-blende crystal structure (B3) at high pressures and temperatures using multi-anvil apparatus. The ambient volume inferred from the compression curves is smaller than that of the starting material. Using the 3 -order Birch-Murnaghan equation of state and the Mie-Grüneisen-Debye model, we have determined the thermoelastic parameters of the B3-SiC to be K =228±3 GPa, K ',=4.4±0.4, q=0.27±0.37, where K , K ' and q are the isothermal bulk modulus, its pressure derivative and logarithmic volume dependence of the Grüneisen parameter, respectively. Using the 3 -order Birch-Murnaghan EOS with the thermal expansion coefficient, the thermoelastic parameters have been found as K =221±3 GPa, K ',=5.2±0.4, α =0.90±0.02 ⋅ 10  ⋅ K , where α is the thermal expansion coefficient at room pressure and temperature. We have determined that paired B3-SiC - MgO calibrants can be used to estimate pressure and temperature simultaneously in ultrahigh-pressure experiments up to 60 GPa.