Fracture and buckling of piezoelectric nanowires subject to an electric field
Fracture and buckling are major failure modes of thin and long nanowires (NWs), which could be affected significantly by an electric field when piezoelectricity is involved in the NWs. This paper aims to examine the issue based on the molecular dynamics simulations, where the gallium nitride (GaN) N...
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Published in | Journal of applied physics Vol. 114; no. 17 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
07.11.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Fracture and buckling are major failure modes of thin and long nanowires (NWs), which could be affected significantly by an electric field when piezoelectricity is involved in the NWs. This paper aims to examine the issue based on the molecular dynamics simulations, where the gallium nitride (GaN) NWs are taken as an example. The results show that the influence of the electric field is strong for the fracture and the critical buckling strains, detectable for the fracture strength but almost negligible for the critical buckling stress. In addition, the reversed effects are achieved for the fracture and the critical buckling strains. Subsequently, the Timoshenko beam model is utilized to account for the effect of the electric field on the axial buckling of the GaN NWs, where nonlocal effect is observed and characterized by the nonlocal coefficient e0a=1.1 nm. The results show that the fracture and buckling of piezoelectric NWs can be controlled by applying an electric field. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Article-2 ObjectType-Feature-1 content type line 23 |
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4829277 |