Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

• Published in: IEEE transactions on ultrasonics, ferroelectrics, and frequency control Vol. 55; no. 2; pp. 489 - 493
• Main Authors: Tzu Chieh Chen, Yueh Ting Lin, Chung Yi Lin, Chen, W.C., Meei Ru Chen, Hui-Ling Kao, Chyi, J.-I., Hsu, C.-H.
• Format: Journal Article
• Language: English
• Published: United States IEEE 01.02.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Acoustic sensors; Acoustic waves; Aluminum nitride; Devices; Frequency; Gallium nitride; Gallium nitrides; Oscillations; Oscillators; Sapphire; Sensor phenomena and characterization; Sensors; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Temperature sensors
• ISSN: 0885-3010; 1525-8955
• DOI: 10.1109/TUFFC.2008.666

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300degC. Surface acoustic wave (SAW) devices fabricated on AIN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire- based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AIN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the Ill-nitrides.