Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC

• Published in: Japanese Journal of Applied Physics Vol. 62; no. SC; p. SC1001
• Main Authors: Nishio, Johji, Ota, Chiharu, Iijima, Ryosuke
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01.04.2023; Japanese Journal of Applied Physics
• Subjects: Basal plane; Burgers vector; Edge dislocations; Photoluminescence; photoluminescenece; Silicon carbide; stacking fault; Stacking faults; Substrates; Transmission electron microscopy
• ISSN: 0021-4922; 1347-4065
• DOI: 10.35848/1347-4065/aca033

Abstract Partial dislocation (PD) combinations near the substrate/epilayer interface and the epilayer surface of 4H-SiC are analyzed for bar-shaped single Shockley-type stacking faults (1SSFs) by plan-view transmission electron microscopy (TEM) with the aid of photoluminescence imaging. Although the PDs are found to have a zigzag structure similar to that found in triangular 1SSF by TEM observation, the combination is thought to be different, consisting of a 30° Si-core + 90° Si-core for the triangular 1SSF and 30° Si-core + 30° C-core for the bar-shaped 1SSF. The features of the basal plane dislocation at the origin are speculated by also identifying the converted threading edge dislocation by additional Burgers vector determination of the PD loop by TEM.