Chemomechanical polishing of silica and silicon by fluoride- and oxide-based reagents : identification of a reaction intermediate

The effect of added hydrogendifluoride anion on the chemomechanical polishing of silica and silicon wafers by aqueous suspensions of cerium(IV) or silicon(IV) oxides was investigated over a range of solution pH. The effect on silica is marked at very low pH. An intermediate under these conditions wa...

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Bibliographic Details
Published inJournal of materials chemistry Vol. 6; no. 2; pp. 227 - 232
Main Authors BOYLE, D. S, WINFIELD, J. M
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 1996
Subjects
Chemistry
Exact sciences and technology
General and physical chemistry
Solid-liquid interface
Surface physical chemistry
Magic angle
Reaction intermediate
Alkali metal Compounds
Potassium Hexafluosilicates
Silicon Oxides
Polishing
Etching
Aqueous solution
Surface analysis
Roughness measurement
NMR spectrum
Silica
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Summary:The effect of added hydrogendifluoride anion on the chemomechanical polishing of silica and silicon wafers by aqueous suspensions of cerium(IV) or silicon(IV) oxides was investigated over a range of solution pH. The effect on silica is marked at very low pH. An intermediate under these conditions was identified as K2SiF6 coated with a thin silica-like layer. The hydrogendifluoride anion is ineffective for silica polishing above pH 7 and for silicon under all conditions examined. The most effective reagent for the latter substrate is a mixture of cerium(IV) oxide and alkaline silica sol. An explanation for the role of the hydrogendifluoride anion is offered. 18 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0959-9428
1364-5501
DOI:10.1039/JM9960600227