Universal regularities of charged carrier transfer in disordered materials

The temperature dependences of the conductivity have been analyzed for a number of disordered materials (amorphous compounds, glasses, polycrystalline and pressed composite materials, etc.). It is shown that these dependences are usually described by the inverse Arrhenius law for nonpolar semiconduc...

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Bibliographic Details
Published inGlass physics and chemistry Vol. 26; no. 4; pp. 364 - 372
Main Authors Gudaev, O A, Malinovsky, V K
Format Journal Article
LanguageEnglish
Published Heidelberg Springer Nature B.V 01.07.2000
Subjects
Amorphous materials
Composite materials
Density of states
Electron transitions
Fermi surfaces
Glass
Inverse
Law
Mathematical models
Power law
Semiconductors
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Summary:The temperature dependences of the conductivity have been analyzed for a number of disordered materials (amorphous compounds, glasses, polycrystalline and pressed composite materials, etc.). It is shown that these dependences are usually described by the inverse Arrhenius law for nonpolar semiconductors and by the power law for polar materials. A model is proposed within which the universality of these laws for the conductivity is explained by the exponential form of the density of states near the Fermi level or in the range of the allowed band tails. This form of density-of-state function is observed for a large number of disordered materials with different nature. In the framework of the model, the conductivity obeys the inverse Arrhenius law upon one-phonon electron transitions between states and the power law upon multiphonon transitions. The corollaries following from the model proposed are considered.
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ISSN:1087-6596
1608-313X
DOI:10.1007/BF02732001