Multicolor InGaAs quantum-dot infrared photodetectors

We report two-color InGaAs quantum-dot infrared photodetectors. The InGaAs self-assembled quantum dots were grown on InGaP matrix via metal-organic chemical vapor deposition and fabricated as intersubband photoconductive structure. Bias-controlled two-color photoconductive responses were obtained at...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 16; no. 11; pp. 2538 - 2540
Main Authors Kim, S.M., Harris, J.S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Chemical vapor deposition
Gallium arsenide
Indium gallium arsenide
Infrared detectors
Optical scattering
Optical sensors
Photodetectors
Quantum dot lasers
Quantum dots
Self-assembly
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Summary:We report two-color InGaAs quantum-dot infrared photodetectors. The InGaAs self-assembled quantum dots were grown on InGaP matrix via metal-organic chemical vapor deposition and fabricated as intersubband photoconductive structure. Bias-controlled two-color photoconductive responses were obtained at two different infrared window, mid-infrared of /spl lambda/=5.5 μm and far-infrared of /spl lambda/=9.2 μm at 77 K. Our devices were operated with low dark currents and high optical gains, and resulted in peak detectivity D/sup */ of 4.7×10/sup 9/ cm Hz 1 2//W at /spl lambda/=5.5 μm with bias of -2.0 V, and 7.2×10/sup 8/ cm Hz 1 2//W at /spl lambda/=9.2 μm with bias of -0.8 V.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.835197